NTLTD7900ZR2
PACKAGE DIMENSIONS
Micro8 LEADLESS
CASE 846C--01
ISSUE C
INDEX AREA
2X
0.15 T
2X
0.15 T
NOTE 4
0.10 T W Y
0.05 T W
D 8X
G 6X
8
7
6
5
A
TOP VIEW
E
1
2
3
4
W
Y
B
L
F
P
8X
T
J
8
7
6
5
0.10 T
8X
0.08 T
SIDE VIEW
L1
SEATING
PLANE
AA
NOTE 6
K AA
C
NOTE 4
NOTES:
1. DIMENSIONS AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. THE TERMINAL #1 IDENTIFIER AND TERMINAL
NUMBERING CONVENTION SHALL CONFORM TO
JESD 95--1 SPP--012. DETAILS OF TERMINAL #1
IDENTIFIER ARE OPTIONAL, BUT MUST BE
LOCATED WITHIN THE ZONE INDICATED. THE
TERMINAL #1 IDENTIFIER MAY BE EITHER A
MOLD OR MARKED FEATURE.
4. DIMENSION D APPLIES TO METALLIZED
TERMINAL AND IS MEASURED BETWEEN
0.25 MM AND 0.30 MM FROM TERMINAL TIP.
DIMENSION L1 IS THE TERMINAL PULL BACK
FROM PACKAGE EDGE, UP TO 0.1 MM IS
ACCEPTABLE. L1 IS OPTIONAL.
5. DEPOPULATION IS POSSIBLE IN A
SYMMETRICAL FASHION.
6. OPTIONAL SIDE VIEW CAN SHOW LEADS 5 AND
8 REMOVED.
MILLIMETERS
DIM MIN MAX
A 3.30 BSC
B 3.30 BSC
C 0.85 0.95
D 0.25 0.35
E 1.30 1.50
F 2.55 2.75
G 0.65 BSC
H 0.95 1.15
J 0.25 BSC
K 0.00 0.05
L 0.35 0.45
L1 0.00 0.10
P 1.28 1.38
U 0.17 TYP
DETAIL Z
DETAIL Z
U
4X
H
VIEW AA--AA
1.23
0.40
8X
SOLDERING FOOTPRINT*
2.75
1.50
0.58
3.60
8X 0.33
0.65 PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb--Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
7
相关PDF资料
NTLUD3191PZTAG MOSFET P-CH 20V 1.7A DUAL 6UDFN
NTLUD3A260PZTBG POWER MOSFET 20V 2A 200 M UDFN6
NTLUF4189NZTAG MOSFET N-CH 30V 1.2A 6UDFN
NTLUS3192PZTBG MOSFET P-CH 20V 3.4A SGL 6UDFN
NTLUS3A18PZTBG MOSFET P-CH 20V 8.2A 6UDFN
NTLUS3A39PZTBG MOSFET P-CH 20V 5.2A 6UDFN
NTLUS3A40PZTBG T4 20/8 PCH 2X2 UDFN SING
NTLUS3A90PZTBG POWER MOSFET 20V 3A 60 MO UDFN6
相关代理商/技术参数
NTLTS3107P 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:High Efficiency DC-DC Converters
NTLTS3107P_05 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET -20 V, -8.3 A, Single P-Channel,Micro8 Leadless Package
NTLTS3107PR2G 功能描述:MOSFET PFET 8A PB RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLUD3191PZ 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −20 V, −1.8 A, Cool Dual P−Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUD3191PZTAG 功能描述:MOSFET PFET WDFN6 20V 1.7A 250mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLUD3191PZTBG 功能描述:MOSFET PFET WDFN6 20V 1.7A 250mOhm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
NTLUD3A260PZ 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET a??20 V, a??2.1 A,Cool Dual Pa??Channel, ESD, 1.6x1.6x0.55 mm UDFN Package
NTLUD3A260PZTAG 功能描述:IGBT 晶体管 POWER MOSFET 20V 2A 200 M RoHS:否 制造商:Fairchild Semiconductor 配置: 集电极—发射极最大电压 VCEO:650 V 集电极—射极饱和电压:2.3 V 栅极/发射极最大电压:20 V 在25 C的连续集电极电流:150 A 栅极—射极漏泄电流:400 nA 功率耗散:187 W 最大工作温度: 封装 / 箱体:TO-247 封装:Tube